![]() JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound #N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8.238000007599 discharging Methods 0.000 claims description 2.230000005533 two-dimensional electron gas Effects 0.000 claims description 3.239000004065 semiconductor Substances 0.000 claims abstract description 15.239000000463 material Substances 0.000 claims abstract description 15.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from US201862624499P external-priority Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司 Publication of TW201935855A publication Critical patent/TW201935855A/en Application granted granted Critical Publication of TWI688210B publication Critical patent/TWI688210B/en Links ( en Inventor 陳建宏 陳昆龍 Original Assignee 台灣積體電路製造股份有限公司 Priority date (The priority date is an assumption and is not a legal conclusion. ![]() Google Patents TW201935855A - Level shifter circuit, gate driver circuit, and method ![]() TW201935855A - Level shifter circuit, gate driver circuit, and method ![]()
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